amplifiers - l ine a r & p ower - chip 1 hmc1022 v 0 0.0 811 gaas phemt mmic 0.25 watt power amplifier, dc - 48 ghz general description features functional diagram the hm c1022 is a gaas p hem t mmi c distrib - uted p ower amplifer which operates between dc and 48 g h z. the amplifer provides 12 db of gain, 32 dbm output ip 3 and +22 dbm of output power at 1 db gain compression while requiring 150 ma from a +10 v supply. the hm c1022 exhibits a slightly positive gain slope from 10 to 35 g h z, making it ideal for ew , e c m , r adar and test equipment applications. the hm c1022 amplifer i / o s are internally matched to 50 o hms facilitating integra - tion into m ulti-chip- m odules ( m c m s). all data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). h igh p 1db o utput p ower: 22 dbm h igh p sat o utput p ower: 24 dbm h igh gain: 12 db h igh o utput ip 3: 32 dbm s upply voltage: +10 v @ 150 ma 50 o hm m atched i nput/ o utput die s ize: 2.82 x 1.50 x 0.1 mm typical applications the hm c1022 is ideal for: ? test instrumentation ? microwave radio & vsat ? military & space ? telecom infrastructure ? fiber optics electrical specifcations, t a = +25 c, vdd = +10 v, vgg2 = +4.5 v, idd = 150 ma [1] p arameter m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. units f requency r ange dc - 16 16 - 36 36 - 48 g hz gain 9.5 11. 5 9.5 12 9.5 11. 5 db gain f latness 0.5 0.3 1.1 db gain variation o ver temperature 0.012 0.018 0.041 db/ c i nput r eturn l oss 18 16 15 db o utput r eturn l oss 28 22 18 db o utput p ower for 1 db compression ( p 1db) 20 22 19.5 21.5 16 19 dbm s aturated o utput p ower ( p sat) 24.5 23.5 21 dbm o utput third o rder i ntercept ( ip 3) 35 32 29 dbm n oise f igure 4 5.5 8 db s upply current ( i dd) (vdd= 10v, vgg1= -0.8v typ.) 150 150 150 ma [1] adjust vgg1 between -2 to 0 v to achieve i dd = 150 ma typical. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 2 hmc1022 v 0 0.0 811 gaas phemt mmic 0.25 watt power amplifier, dc - 48 ghz output return loss vs. temperature gain & return loss gain vs. temperature low frequency gain & return loss input return loss vs. temperature gain vs. vdd [1] -40 -30 -20 -10 0 10 20 0 5 10 15 20 25 30 35 40 45 50 55 s21 s11 s22 response (db) frequency (ghz) 6 8 10 12 14 16 18 0 5 10 15 20 25 30 35 40 45 50 +25c +85c -55c gain (db) frequency (ghz) -40 -30 -20 -10 0 0 5 10 15 20 25 30 35 40 45 50 +25c +85c -55c return loss (db) frequency (ghz) -40 -30 -20 -10 0 0 5 10 15 20 25 30 35 40 45 50 +25c +85c -55c return loss (db) frequency (ghz) 6 8 10 12 14 16 18 0 5 10 15 20 25 30 35 40 45 50 +8v +10v +11v gain (db) frequency (ghz) -60 -50 -40 -30 -20 -10 0 10 20 0.0001 0.001 0.01 0.1 1 10 s21 s11 s22 response (db) frequency (ghz) [1] f or vdd= +8v, vgg2=+3.5v; for vdd= +10v, vgg2= +4.5v; for vdd= 11v, vgg2= +5.5v. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 3 hmc1022 v 0 0.0 811 gaas phemt mmic 0.25 watt power amplifier, dc - 48 ghz psat vs. supply current [2] psat vs. temperature psat vs. supply voltage [1] p1db vs. supply current [2] p1db vs. temperature p1db vs. supply voltage [1] 14 16 18 20 22 24 26 0 5 10 15 20 25 30 35 40 45 50 +25c +85c -55c p1db (dbm) frequency (ghz) 14 16 18 20 22 24 26 0 5 10 15 20 25 30 35 40 45 50 +8v +10v +11v p1db (dbm) frequency (ghz) 16 18 20 22 24 26 28 0 5 10 15 20 25 30 35 40 45 50 +25c +85c -55c psat (dbm) frequency (ghz) 16 18 20 22 24 26 28 0 5 10 15 20 25 30 35 40 45 50 +8v +10v +11v psat (dbm) frequency (ghz) 12 14 16 18 20 22 24 26 0 5 10 15 20 25 30 35 40 45 50 100 ma 150 ma p1db (dbm) frequency (ghz) 16 18 20 22 24 26 28 0 5 10 15 20 25 30 35 40 45 50 100 ma 150 ma psat (dbm) frequency (ghz) [1] f or vdd= +8v, vgg2=+3.5v; for vdd= +10v, vgg2= +4.5v; forvdd= 11v vgg2= +5.5v. [2] vdd= +10v, vgg2=+3.5v. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 4 hmc1022 v 0 0.0 811 gaas phemt mmic 0.25 watt power amplifier, dc - 48 ghz output im3 @ vdd = +11v [1] output ip3 vs. supply voltage @ pout = 14 dbm / tone [1] output im3 @ vdd = +8v [1] output im3 @ vdd = +10v [1] output ip3 vs. temperature @ pout = 14 dbm / tone 22 24 26 28 30 32 34 36 38 0 4 8 12 16 20 24 28 32 36 40 44 48 +25c +85c -55c frequency (ghz) ip3 (dbm) 22 24 26 28 30 32 34 36 38 0 4 8 12 16 20 24 28 32 36 40 44 48 +8v +10v +11v frequency (ghz) ip3 (dbm) 0 10 20 30 40 50 60 0 2 4 6 8 10 12 14 16 18 20 4 ghz 10 ghz 16 ghz 22 ghz 28 ghz 34 ghz 40 ghz 44 ghz im3 (dbc) pout/tone (dbm) 0 10 20 30 40 50 60 0 2 4 6 8 10 12 14 16 18 20 4 ghz 10 ghz 16 ghz 22 ghz 28 ghz 34 ghz 40 ghz 44 ghz im3 (dbc) pout/tone (dbm) 0 10 20 30 40 50 60 0 2 4 6 8 10 12 14 16 18 20 4 ghz 10 ghz 16 ghz 22 ghz 28 ghz 34 ghz 40 ghz 44 ghz im3 (dbc) pout/tone (dbm) noise figure vs. temperature 0 2 4 6 8 10 12 0 4 8 12 16 20 24 28 32 36 40 44 48 +25c +85c -55c noise figure(db) frequency (ghz) [1] f or vdd= +8v, vgg2=+3.5v; for vdd= +10v, vgg2= +4.5v; for vdd= 11v vgg2= +5.5v. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 5 hmc1022 v 0 0.0 811 gaas phemt mmic 0.25 watt power amplifier, dc - 48 ghz gain & power vs. supply current @ 24 ghz gain & power vs. supply voltage @ 24 ghz power dissipation power compression @ 24 ghz reverse isolation vs. temperature -80 -70 -60 -50 -40 -30 -20 -10 0 0 5 10 15 20 25 30 35 40 45 50 +25c +85c -55c isolation (db) frequency (ghz) 0 4 8 12 16 20 24 28 32 -4 -1 2 5 8 11 14 17 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 0 0.5 1 1.5 2 0 3 6 9 12 15 4 ghz 10 ghz 20 ghz 30 ghz 40 ghz 46 ghz power dissipation (w) input power (dbm) 0 5 10 15 20 25 30 8 9 10 11 gain p1db psat vdd (v) gain (db), p1db (dbm), psat (dbm) 0 5 10 15 20 25 30 100 110 120 130 140 150 gain p1db psat idd (ma) gain (db), p1db (dbm), psat (dbm) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 6 hmc1022 v 0 0.0 811 gaas phemt mmic 0.25 watt power amplifier, dc - 48 ghz second harmonics vs. temperature @ pout = 10 dbm, vdd = 10v & vgg = 4.5v, 150 ma second harmonics vs. vdd @ pout = 10 dbm, idd = 150 ma [1] second harmonics vs. pout vdd = 10v & vgg = 4.5v & idd = 150 ma absolute maximum ratings drain bias voltage (vdd) 12v gate bias voltage (vgg1) -3 to 0 vdc gate bias voltage (vgg2) f or vdd = 12v, vgg2 = 5.5v i d d >125ma f or vdd between 8.5v to 11v, vgg2 = (vdd - 6.5v) to 5.5v f or vdd < 8.5v, vgg2 must remain > 2v rf i nput p ower ( rfin ) 20 dbm channel temperature 150 c continuous p diss (t= 85 c) (derate 27 m w /c above 85 c) 1.76 w thermal r esistance (channel to die bottom) 37 c/ w ele ct ros tat ic sensi t i v e de v ic e o b ser v e h a n d lin g pre caut ions vdd (v) i dd (ma) +8 150 +10 150 +11 150 typical supply current vs. vdd o utput p ower into v swr >7:1 24 dbm s torage temperature -65 to 150 c o perating temperature -55 to 85 c 0 10 20 30 40 50 60 70 0 4 8 12 16 20 24 +25c +85c -55c second harmonic (dbc) frequency(ghz) 0 10 20 30 40 50 60 70 0 4 8 12 16 20 24 +8v +10v +11v second harmonic (dbc) frequency(ghz) 0 10 20 30 40 50 60 70 0 4 8 12 16 20 24 +4 dbm +6 dbm +8 dbm +10 dbm +12 dbm +14 dbm +16 dbm +18 dbm second harmonic (dbc) frequency(ghz) [1] f or vdd= +8v, vgg=+3.5v; for vdd= +10v, vgg= +4.5v; for vdd= 11v vgg= +5.5v. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 7 hmc1022 v 0 0.0 811 gaas phemt mmic 0.25 watt power amplifier, dc - 48 ghz outline drawing no t es : 1. a ll d imensions in in c hes [ millime t ers ] 2. d ie t hi ck ness is 0.004 (0.100) 3. ty pi ca l b on d p ad is 0.004 (0.100) s qua re 4. b on d p ad me ta li zat ion : g ol d 5. back si d e me ta lli zat ion : g ol d 6. back si d e me ta l is g ro u n d 7. no c onne ct ion re qu ire d for u nl ab ele d b on d p ad s 8. o v er a ll d ie si z e is .002 die packaging information [1] s tandard alternate g p -1 (gel p ack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 8 hmc1022 v 0 0.0 811 gaas phemt mmic 0.25 watt power amplifier, dc - 48 ghz p ad n umber f unction description i nterface s chematic 1 rfin this pad is dc coupled and matched to 50 o hms. blocking capacitor is required. 2 vgg2 gate control 2 for amplifer. attach bypass capacitor per application circuit herein. f or nominal operation +4.5v should be applied to vgg2. 4, 7 acg2, acg4 l ow frequency termination. attach bypass capacitor per application circuit herein. 3 acg1 l ow frequency termination. attach bypass capacitor per application circuit herein. 5 rfo ut & vdd rf output for amplifer. connect dc bias (vdd) network to provide drain current ( i dd). s ee application circuit herein. 6 acg3 l ow frequency termination. attach bypass capacitor per application circuit herein. 8 vgg1 gate control 1 for amplifer. attach bypass capacitor per application circuit herein. p lease follow mmi c amplifer biasing p rocedure application note. die bottom g nd die bottom must be connected to rf /dc ground. pad descriptions for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 9 hmc1022 v 0 0.0 811 gaas phemt mmic 0.25 watt power amplifier, dc - 48 ghz application circuit note 1: drain bias (vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 500ma assembly diagram for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 10 hmc1022 v 0 0.0 811 gaas phemt mmic 0.25 watt power amplifier, dc - 48 ghz mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hm c general h andling, m ounting, bonding n ote). 50 o hm m icrostrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip ( f igure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. o ne way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane ( f igure 2). m icrostrip substrates should be placed as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either w affle or gel based es d protec - tive containers, and then sealed in an es d protective bag for shipment. o nce the sealed es d protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: h andle the chips in a clean environment. d o no t attempt to clean the chip using liquid cleaning systems. static sensitivity: f ollow es d precautions to protect against es d strikes. transients: s uppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: h andle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with au s n eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. e utectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. w hen hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. d o no t expose the chip to a temperature greater than 320 c for more than 20 seconds. n o more than 3 seconds of scrubbing should be required for attachment. e poxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with two 1 mil wires are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possible, less than 12 mils (0.31 mm). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
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